Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- RS Stock No.:
- 598-241
- Mfr. Part No.:
- TN5325N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
Kr.5 509 00
(exc. VAT)
Kr.6 886 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 23. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | Kr. 5,509 | Kr. 5 509,00 |
*price indicative
- RS Stock No.:
- 598-241
- Mfr. Part No.:
- TN5325N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.2 mm | |
| Height | 5.3mm | |
| Length | 4.2mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N-Channel Vertical DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.2 mm | ||
Height 5.3mm | ||
Length 4.2mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Microchip N channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold
High input impedance and high gain
Free from secondary breakdown
Related links
- Microchip TN5325 Silicon N-Channel MOSFET 250 V, 3-Pin TO-92 TN5325K1-G
- Microchip VN3205 Silicon N-Channel MOSFET 50 V, 3-Pin TO-92 VN3205N3-G
- Microchip TC2320 Silicon N/P-Channel-Channel MOSFET 200 V, 8-Pin SOIC TC2320TG-G
- Microchip VN2460 Silicon N-Channel MOSFET 600 V, 3-Pin TO-92 VN2460N3-G
- Microchip TN0106 Silicon N-Channel MOSFET 60 V, 3-Pin TO-92 TN0106N3-G
- Microchip VN0606 Silicon N-Channel MOSFET 60 V, 3-Pin TO-92 VN0606L-G
- Microchip TN2640 Silicon N-Channel MOSFET 400 V, 3-Pin TO-92 TN2640N3-G
- Microchip VN0109 Silicon N-Channel MOSFET 90 V, 3-Pin TO-92 VN0109N3-G