Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

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Subtotal (1 reel of 2000 units)*

Kr.21 630 00 

(exc. VAT)

Kr.27 038 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +Kr. 10,815Kr. 21 630,00

*price indicative

RS Stock No.:
598-144
Mfr. Part No.:
TN2504N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N-Channel Vertical DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

450mA

Maximum Drain Source Voltage Vds

40V

Package Type

TO-92-3 (TO-226AA)

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.8Ω

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Operating Temperature

150°C

Length

4.2mm

Width

4.2 mm

Standards/Approvals

RoHS Compliant

Height

5.3mm

Automotive Standard

No

The Microchip N channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown.

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

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