Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

RS Stock No.:: 598-189
Mfr. Part No.:: TN2425N8-G
Brand:: Microchip

Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

Subtotal (1 reel of 2000 units)*

Kr.26 118 00

(exc. VAT)

Kr.32 648 00

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Reel*
2000 +	Kr. 13,059	Kr. 26 118,00

*price indicative

RS Stock No.:: 598-189
Mfr. Part No.:: TN2425N8-G
Brand:: Microchip

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Product Type	Single MOSFETs
	Channel Type	N-Channel Vertical DMOS FET
	Maximum Continuous Drain Current Id	450mA
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-92-3 (TO-226AA)
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement Mode
	Maximum Power Dissipation Pd	1W
	Forward Voltage Vf	1.8V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	4.2 mm
	Height	5.3mm
	Standards/Approvals	RoHS Compliant
	Length	4.2mm
	Automotive Standard	No

	Select all
	Brand Microchip
	Product Type Single MOSFETs
	Channel Type N-Channel Vertical DMOS FET
	Maximum Continuous Drain Current Id 450mA
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-92-3 (TO-226AA)
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement Mode
	Maximum Power Dissipation Pd 1W
	Forward Voltage Vf 1.8V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 4.2 mm
	Height 5.3mm
	Standards/Approvals RoHS Compliant
	Length 4.2mm
	Automotive Standard No

Datasheet - TN2425N8-G

The Microchip N channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown.

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

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