Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

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Subtotal (1 bag of 1000 units)*

Kr.12 447 00 

(exc. VAT)

Kr.15 559 00 

(inc. VAT)

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Units
Per unit
Per Bag*
1000 +Kr. 12,447Kr. 12 447,00

*price indicative

RS Stock No.:
598-650
Mfr. Part No.:
TN0620N3-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N-Channel Vertical DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

450mA

Maximum Drain Source Voltage Vds

40V

Package Type

TO-92-3 (TO-226AA)

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.8Ω

Channel Mode

Enhancement Mode

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

1W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

5.3mm

Length

4.2mm

Width

4.2 mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

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