Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

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Subtotal (1 bag of 1000 units)*

Kr.11 427 00 

(exc. VAT)

Kr.14 284 00 

(inc. VAT)

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Per Bag*
1000 +Kr. 11,427Kr. 11 427,00

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RS Stock No.:
598-472
Mfr. Part No.:
VN0606L-G
Brand:
Microchip
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Brand

Microchip

Product Type

Single MOSFETs

Channel Type

N-Channel Vertical DMOS FET

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

90V

Package Type

TO-92-3 (TO-226AA)

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement Mode

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Width

4.19 mm

Length

5.08mm

Height

5.33mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Microchip N channel enhancement-mode vertical transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure along with a well-proven silicon gate manufacturing process. This combination ensures the device is free from secondary breakdown and operates with a low power drive requirement, making it efficient and reliable for various applications.

Ease of paralleling

Low power drive requirement

High input impedance and high gain

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