Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

View all MOSFETs

Subtotal (1 bag of 1000 units)*

Kr.11 427 00 

(exc. VAT)

Kr.14 284 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 23. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Bag*
1000 +Kr. 11,427Kr. 11 427,00

*price indicative

RS Stock No.:
598-665
Mfr. Part No.:
VN2460N3-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Channel Type

N-Channel Vertical DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

90V

Package Type

TO-92-3 (TO-226AA)

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement Mode

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Width

4.19 mm

Length

5.08mm

Height

5.33mm

Automotive Standard

No

COO (Country of Origin):
PH
The Microchip N Channel enhancement-mode vertical MOSFET is a normally-off transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while offering the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even under demanding conditions.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source drain diode

High input impedance and high gain

Related links