Microchip 2N6660 Type N-Channel Single MOSFETs, 410 mA, 60 V Enhancement, 3-Pin TO-39 2N6660

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

Kr.231 89 

(exc. VAT)

Kr.289 86 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 498 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4Kr. 231,89
5 +Kr. 224,91

*price indicative

RS Stock No.:
649-369
Mfr. Part No.:
2N6660
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

410mA

Maximum Drain Source Voltage Vds

60V

Series

2N6660

Package Type

TO-39

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

6.25W

Maximum Operating Temperature

150°C

Standards/Approvals

Lead (Pb)-free/RoHS

Automotive Standard

No

COO (Country of Origin):
TH
The Microchip N-Channel, Enhancement-Mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-binational produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low Ciss and fast switching speeds

Excellent thermal stability

Related links