ROHM RD3L08CBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08CBLHRBTL
- RS Stock No.:
- 687-440
- Mfr. Part No.:
- RD3L08CBLHRBTL
- Brand:
- ROHM
Bulk discount available
Subtotal (1 tape of 2 units)*
Kr.27 43
(exc. VAT)
Kr.34 288
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 20. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | Kr. 13,715 | Kr. 27,43 |
| 20 - 48 | Kr. 12,11 | Kr. 24,22 |
| 50 - 198 | Kr. 10,84 | Kr. 21,68 |
| 200 - 998 | Kr. 8,765 | Kr. 17,53 |
| 1000 + | Kr. 8,565 | Kr. 17,13 |
*price indicative
- RS Stock No.:
- 687-440
- Mfr. Part No.:
- RD3L08CBLHRBTL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08CBLHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08CBLHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for demanding applications, offering excellent efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current of 80A, this device is ideal for switching and amplification tasks in automotive and consumer electronics. Its low on-resistance of just 5.3mΩ maximises power efficiency, while its robust construction ensures it withstands harsh operational environments, meeting AEC-Q101 qualifications and providing 100% avalanche testing for enhanced safety. This MOSFET represents a powerful solution for advanced circuitry, blending performance with stringent compliance standards.
Low on resistance of 5.3mΩ significantly improves energy efficiency
Supports up to 80A continuous drain current for robust performance in demanding applications
100% avalanche tested to ensure stability and reliability during operation
AEC Q101 qualified, making it suitable for automotive applications
Wide operating junction temperature range from -55°C to +175°C ensures reliable performance in various conditions
Integrated thermal resistance of junction-case optimises power handling capabilities
Pb free and RoHS compliant, aligning with modern environmental standards.
Related links
- ROHM RD3L08DBLHRB N-Channel MOSFET 60 V, 3-Pin DPAK RD3L08DBLHRBTL
- ROHM AG091FLD3HRB N-Channel MOSFET 60 V, 3-Pin DPAK AG091FLD3HRBTL
- ROHM AG191FLD3HRB N-Channel MOSFET 60 V, 3-Pin DPAK AG191FLD3HRBTL
- ROHM RD3L08DBKHRB N-Channel MOSFET 60 V, 3-Pin DPAK RD3L08DBKHRBTL
- ROHM RD3L08BBJHRB P-Channel MOSFET 60 V, 3-Pin DPAK RD3L08BBJHRBTL
- ROHM RD3 N-Channel MOSFET 40 V, 3-Pin DPAK RD3G08CBKHRBTL
- ROHM AG086FGD3HRB N-Channel MOSFET 40 V, 3-Pin DPAK AG086FGD3HRBTL
- ROHM RD3G08CBLHRB N-Channel MOSFET 40 V Depletion, 3-Pin DPAK RD3G08CBLHRBTL
