Vishay SQ2308FES N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 653-060
Mfr. Part No.:: SQ2308FES-T1_GE3
Brand:: Vishay

Vishay SQ2308FES N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23

Bulk discount available

View bulk pricing options

Subtotal (1 tape of 1 unit)*

Kr. 4,23

(exc. VAT)

Kr. 5,29

(inc. VAT)

Stock information currently inaccessible - Please check back later

Tape(s)	Per Tape
1 - 24	Kr. 4,23
25 - 99	Kr. 4,00
100 - 499	Kr. 3,43
500 - 999	Kr. 2,86
1000 +	Kr. 2,52

*price indicative

RS Stock No.:: 653-060
Mfr. Part No.:: SQ2308FES-T1_GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SQ2308FES
	Mount Type	PCB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.15Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	5.3nC
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Width	2.64mm
	Length	3.04mm
	Height	1.12mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Channel Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SQ2308FES
	Mount Type PCB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.15Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 5.3nC
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Width 2.64mm
	Length 3.04mm
	Height 1.12mm
	Automotive Standard AEC-Q101

Datasheet - SQ2308FES-T1_GE3

Vishay SQ2308FES Series Single MOSFETs, 60V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - SQ2308FES-T1_GE3

This single MOSFET device is a compact N-channel enhancement-mode transistor designed for general switching and amplification tasks in PCB-mounted circuits. It operates across a wide thermal range suitable for demanding environments and is supplied in a SOT-23 surface-mount package for space-conscious board layouts.

Features and Benefits:

• 60V drain-source rating enables higher-voltage switching
• 2.3A continuous drain current allows moderate load handling
• 0.15Ω low Rds(on) reduces conduction losses
• 2W power dissipation supports steady-state thermal loading
• 5.3nC typical gate charge offers responsive switching performance
• 20V maximum gate voltage provides robust gate-drive margin

Applications

• Suitable for automotive sensor interface circuits
• Ideal for DC/DC converter switching stages
• Used with motor-driver pre-drivers and low-power actuators
• Can be used for load switching in telematics modules
• Suitable for battery-management protection and control

What ambient temperatures can this component endure in operation?

It is rated to function from -55°C up to 175°C, permitting use in extreme thermal environments.

How is the device packaged for PCB assembly?

It arrives in a SOT-23 surface-mount package with three pins optimised for automated SMT placement.

What gate-drive limitations should designers observe?

The gate-to-source voltage must not exceed 20V to avoid gate-oxide stress.

How does its channel topology affect circuit design?

As an N-channel enhancement device, it requires a positive gate voltage relative to the source to conduct, suitable for low-side switching.