Vishay SISS5208DN Type N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-149
- Mfr. Part No.:
- SISS5208DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 1 unit)*
Kr.20 82
(exc. VAT)
Kr.26 02
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 6 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | Kr. 20,82 |
| 25 - 99 | Kr. 20,36 |
| 100 - 499 | Kr. 19,79 |
| 500 - 999 | Kr. 16,93 |
| 1000 + | Kr. 16,02 |
*price indicative
- RS Stock No.:
- 653-149
- Mfr. Part No.:
- SISS5208DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 172A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SISS5208DN | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0013Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24.6nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Gate Source Voltage Vgs | 7 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.40mm | |
| Height | 0.83mm | |
| Width | 3.40 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 172A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SISS5208DN | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0013Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24.6nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Gate Source Voltage Vgs 7 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.40mm | ||
Height 0.83mm | ||
Width 3.40 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 20 V drain-source voltage. Packaged in PowerPAK 1212-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay SISS5208DN Type N-Channel Single MOSFETs 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3
- Vishay SIS4406DN Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIHM080N60E Type N-Channel Single MOSFETs 600 V Enhancement, 4-Pin PowerPAK
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIB4122DK Type N-Channel Single MOSFETs 100 V Enhancement, 7-Pin PowerPAK
- Vishay SIJ4406DP Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK