Vishay SISS5208DN Type N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-149
- Mfr. Part No.:
- SISS5208DN-T1-GE3
- Brand:
- Vishay
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- RS Stock No.:
- 653-149
- Mfr. Part No.:
- SISS5208DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 172A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SISS5208DN | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0013Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24.6nC | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.40mm | |
| Width | 3.40mm | |
| Height | 0.83mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 172A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SISS5208DN | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0013Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24.6nC | ||
Maximum Gate Source Voltage Vgs 8V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Operating Temperature 150°C | ||
Length 3.40mm | ||
Width 3.40mm | ||
Height 0.83mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SISS5208DN Series Single MOSFETs, 20V Maximum Drain Source Voltage, 172A Maximum Continuous Drain Current - SISS5208DN-T1-GE3
This single MOSFET is a surface-mount N-channel enhancement device designed for high-current switching in Compact power assemblies. It operates across a wide temperature range and is intended for applications requiring fast switching and substantial continuous drain capability while maintaining efficient thermal behaviour.
Features and Benefits:
• 172A continuous drain current enables high-load handling • 20V drain-source rating supports low-voltage power rails • 0.0013Ω Rds(on) reduces conduction losses • 24.6nC gate charge allows controlled switching dynamics • 56.8W power dissipation manages thermal stress under load • 150°C maximum operating temperature permits elevated environment use
Applications
• Suitable for motor drive stages in automation equipment • Ideal for high-current DC-DC converters in power supplies • Used for load switching in industrial control panels • Can be used for H-bridge output stages in robotics • Used with high-power MOSFET arrays in inverter modules
What gate voltage range should I plan for in gate-driver design?
The device accepts gate-source voltages up to 8V, so a gate driver that provides Vgs within this limit will ensure safe operation.
How does the package affect PCB layout and thermal paths?
The PowerPAK surface-mount package concentrates thermal and electrical connections on a small footprint, so copper pours and thermal vias are recommended to dissipate the device’s 56.8W power loss.
What ambient conditions are permissible for reliable operation?
The component is rated to operate down to -55°C and up to 150°C, allowing use across harsh industrial temperature ranges.
How should inrush or transient currents be considered in design?
With a low Rds(on) of 0.0013Ω and high continuous current capacity, transient stress should be assessed against surge capabilities and PCB trace current ratings to prevent overstress.
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