Vishay SiR870BDP Type N-Channel Single MOSFETs, 81 A, 100 V Enhancement, 8-Pin PowerPAK

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Kr.18 99 

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Kr.23 74 

(inc. VAT)

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1 - 9Kr. 18,99
10 - 24Kr. 18,42
25 - 99Kr. 17,96
100 - 499Kr. 15,33
500 +Kr. 14,41

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RS Stock No.:
653-201
Mfr. Part No.:
SIR870BDP-T1-UE3
Brand:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK

Series

SiR870BDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0061Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

73nC

Maximum Operating Temperature

150°C

Width

5.15 mm

Length

6.15mm

Standards/Approvals

No

Height

0.61mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.

Pb Free

Halogen free

RoHS compliant

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