Vishay SiR870BDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR870BDP-T1-RE3
- RS Stock No.:
- 204-7224
- Mfr. Part No.:
- SiR870BDP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.324 10
(exc. VAT)
Kr.405 10
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 07. juli 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 32,41 | Kr. 324,10 |
| 50 - 90 | Kr. 25,957 | Kr. 259,57 |
| 100 - 240 | Kr. 22,834 | Kr. 228,34 |
| 250 - 490 | Kr. 22,239 | Kr. 222,39 |
| 500 + | Kr. 21,69 | Kr. 216,90 |
*price indicative
- RS Stock No.:
- 204-7224
- Mfr. Part No.:
- SiR870BDP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiR870BDP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.25mm | |
| Width | 1.12 mm | |
| Length | 5.26mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiR870BDP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 150°C | ||
Height 6.25mm | ||
Width 1.12 mm | ||
Length 5.26mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM) and is tuned for the lowest RDS x Qoss FOM.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
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