Vishay SiDR104ADP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiDR104ADP-T1-RE3

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Subtotal (1 pack of 10 units)*

Kr.161 19 

(exc. VAT)

Kr.201 49 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 16,119Kr. 161,19
50 - 90Kr. 13,453Kr. 134,53
100 - 240Kr. 13,099Kr. 130,99
250 - 490Kr. 12,767Kr. 127,67
500 +Kr. 12,435Kr. 124,35

*price indicative

Packaging Options:
RS Stock No.:
204-7220
Mfr. Part No.:
SiDR104ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Series

SiDR104ADP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.25mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM). It is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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