Vishay TrenchFET Gen IV Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8

View all MOSFETs

Subtotal (1 pack of 25 units)*

Kr.400 85 

(exc. VAT)

Kr.501 05 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 25 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 +Kr. 16,034Kr. 400,85

*price indicative

RS Stock No.:
200-6862
Mfr. Part No.:
SiR104ADP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

150°C

Height

6.15mm

Width

5.15 mm

Length

5.15mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SiR104ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Related links