Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8

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Subtotal (1 pack of 25 units)*

Kr.285 65 

(exc. VAT)

Kr.357 05 

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100Kr. 11,426Kr. 285,65
125 - 225Kr. 10,854Kr. 271,35
250 - 600Kr. 9,715Kr. 242,88
625 - 1225Kr. 9,148Kr. 228,70
1250 +Kr. 7,884Kr. 197,10

*price indicative

RS Stock No.:
200-6843
Mfr. Part No.:
SIJ150DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.4mm

Width

0.98 mm

Standards/Approvals

No

Height

3.4mm

Automotive Standard

No

The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low Qg and Qoss reduce power loss and improve efficiency

Flexible leads provide resilience to mechanical stress

100 % Rg and UIS tested

Qgd/Qgs ratio < 1 optimizes switching characteristics

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