Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8 Si4425FDY-T1-GE3
- RS Stock No.:
- 200-6796
- Mfr. Part No.:
- Si4425FDY-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
Kr.8 772 00
(exc. VAT)
Kr.10 965 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 6 000 unit(s), ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 2,924 | Kr. 8 772,00 |
*price indicative
- RS Stock No.:
- 200-6796
- Mfr. Part No.:
- Si4425FDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 18.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET Gen IV | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 4.8W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 18.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET Gen IV | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 4.8W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Si4425FDY-T1-GE3 is a P-channel 30V (D-S) MOSFET.
TrenchFET Gen IV p-channel power MOSFET
100% Rg tested
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