Vishay TrenchFET Gen IV Type N-Channel MOSFET, 92.5 A, 60 V Enhancement, 8-Pin PowerPAK 1212

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.310 15 

(exc. VAT)

Kr.387 70 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 27. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 100Kr. 12,406Kr. 310,15
125 - 225Kr. 9,921Kr. 248,03
250 - 600Kr. 8,681Kr. 217,03
625 - 1225Kr. 7,44Kr. 186,00
1250 +Kr. 7,065Kr. 176,63

*price indicative

RS Stock No.:
200-6855
Mfr. Part No.:
SiSS22LDN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

92.5A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

65.7W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

3.3mm

Width

3.3 mm

Length

3.3mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SiSS22LDN-T1-GE3 is a N-channel 60V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Related links