Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET, 60 A, 25 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 5 units)*

Kr.120 12 

(exc. VAT)

Kr.150 15 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 24,024Kr. 120,12
50 - 120Kr. 20,454Kr. 102,27
125 - 245Kr. 16,772Kr. 83,86
250 - 495Kr. 13,98Kr. 69,90
500 +Kr. 11,096Kr. 55,48

*price indicative

Packaging Options:
RS Stock No.:
188-4999
Mfr. Part No.:
SISF02DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET Gen IV

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

69.4W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

37nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Common Drain

Length

3.4mm

Width

3.4 mm

Height

0.75mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low source-to-source on resistance

Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

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