Vishay Common Drain TrenchFET Gen IV 2 N-Channel Power MOSFET, 60 A, 25 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 5 units)*

Kr. 124,92

(exc. VAT)

Kr. 156,15

(inc. VAT)

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Units
Per unit
Per Pack*
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5 - 45Kr. 24,984Kr. 124,92-
50 - 120Kr. 21,278Kr. 106,3914%
125 - 245Kr. 17,458Kr. 87,2930%
250 - 495Kr. 14,552Kr. 72,7641%
500 +Kr. 11,532Kr. 57,6653%

*price indicative

Packaging Options:
RS Stock No.:
188-4999
Mfr. Part No.:
SISF02DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET Gen IV

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

37nC

Maximum Gate Source Voltage Vgs

-12V, +16V

Maximum Power Dissipation Pd

69.4W

Maximum Operating Temperature

+150°C

Transistor Configuration

Common Drain

Width

3.4mm

Standards/Approvals

No

Length

3.4mm

Height

0.75mm

Number of Elements per Chip

2

Automotive Standard

No

Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low source-to-source on resistance

Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

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