Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 5 units)*

Kr.137 17 

(exc. VAT)

Kr.171 46 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 27,434Kr. 137,17
50 - 120Kr. 24,664Kr. 123,32
125 - 245Kr. 20,57Kr. 102,85
250 - 495Kr. 16,382Kr. 81,91
500 +Kr. 13,75Kr. 68,75

*price indicative

Packaging Options:
RS Stock No.:
188-5025
Mfr. Part No.:
SiSF20DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET Gen IV

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

69.4W

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Common Drain

Width

3.4 mm

Standards/Approvals

No

Height

0.75mm

Length

3.4mm

Number of Elements per Chip

2

Automotive Standard

No

Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low source-to-source on resistance

Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

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