Vishay TrenchFET Gen IV Type N-Channel MOSFET, 108 A, 45 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 50 units)*

Kr.430 60 

(exc. VAT)

Kr.538 25 

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50Kr. 8,612Kr. 430,60
100 - 200Kr. 7,754Kr. 387,70
250 - 450Kr. 5,599Kr. 279,95
500 - 1200Kr. 5,166Kr. 258,30
1250 +Kr. 4,736Kr. 236,80

*price indicative

RS Stock No.:
200-6847
Mfr. Part No.:
SISS50DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

45V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Power Dissipation Pd

65.7W

Maximum Operating Temperature

150°C

Length

3.3mm

Height

3.3mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SISS50DN-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS(on) in a compact and thermally enhanced package

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

100 % Rg and UIS tested

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