Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 50 units)*

Kr. 597,85

(exc. VAT)

Kr. 747,30

(inc. VAT)

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  • Shipping from 21 December 2026
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Units
Per unit
Per Pack*
50 - 50Kr. 11,957Kr. 597,85
100 - 200Kr. 9,564Kr. 478,20
250 - 450Kr. 8,372Kr. 418,60
500 - 1200Kr. 6,933Kr. 346,65
1250 +Kr. 6,457Kr. 322,85

*price indicative

RS Stock No.:
200-6849
Mfr. Part No.:
SiSS63DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

127.5A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET Gen III

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

65.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

236nC

Maximum Operating Temperature

150°C

Length

3.3mm

Height

3.3mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.

TrenchFET Gen III p-channel power MOSFET

Leadership RDS(on) in compact and thermally enhanced package

100 % Rg and UIS tested

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