Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS63DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

Kr.13 575 00 

(exc. VAT)

Kr.16 968 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 4,525Kr. 13 575,00

*price indicative

RS Stock No.:
200-6848
Mfr. Part No.:
SiSS63DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

127.5A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212

Series

TrenchFET Gen III

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

±12 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.8W

Typical Gate Charge Qg @ Vgs

236nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

No

Width

3.3 mm

Height

3.3mm

Automotive Standard

No

The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.

TrenchFET Gen III p-channel power MOSFET

Leadership RDS(on) in compact and thermally enhanced package

100 % Rg and UIS tested

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