Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3

Subtotal (1 tape of 20 units)*

Kr.145 06 

(exc. VAT)

Kr.181 32 

(inc. VAT)

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Per Tape*
20 +Kr. 7,253Kr. 145,06

*price indicative

Packaging Options:
RS Stock No.:
814-1304
Mfr. Part No.:
SIS415DNT-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212-8

Series

TrenchFET Gen III

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0095Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

55.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

52W

Maximum Operating Temperature

150°C

Width

3.4 mm

Height

0.8mm

Length

3.4mm

Standards/Approvals

RoHS

Automotive Standard

No

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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