Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET, 60 A, 25 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

Kr.20 742 00 

(exc. VAT)

Kr.25 926 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 6,914Kr. 20 742,00

*price indicative

RS Stock No.:
188-4890
Mfr. Part No.:
SISF02DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

25V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

37nC

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

69.4W

Transistor Configuration

Common Drain

Maximum Operating Temperature

-55°C

Height

0.75mm

Standards/Approvals

No

Width

3.4 mm

Length

3.4mm

Number of Elements per Chip

2

Automotive Standard

No

Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low source-to-source on resistance

Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

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