Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- RS Stock No.:
- 200-6853
- Mfr. Part No.:
- SiZ240DT-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr. 353,50
(exc. VAT)
Kr. 442,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 07 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 14,14 | Kr. 353,50 |
| 50 - 100 | Kr. 11,879 | Kr. 296,98 |
| 125 - 225 | Kr. 11,33 | Kr. 283,25 |
| 250 - 600 | Kr. 10,602 | Kr. 265,05 |
| 625 + | Kr. 9,902 | Kr. 247,55 |
*price indicative
- RS Stock No.:
- 200-6853
- Mfr. Part No.:
- SiZ240DT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00805Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 15.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAIR 3 x 3S | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00805Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 15.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay SiZ240DT-T1-GE3 is a dual N-channel 40V (D-S) MOSFETs.
TrenchFET Gen IV power MOSFETs
Integrated MOSFET half-bridge power stage
100 % Rg and UIS tested
Optimized Qgs/Qgs ratio improves switching characteristics
Related links
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ240DT-T1-GE3
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAIR 3 x 3FDC
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAIR 3 x 3FDC SiZ250DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3