Vishay Dual SiZ270DT 2 Type N-Channel MOSFET, 19.1 A, 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S

Subtotal (1 reel of 3000 units)*

Kr.19 512 00 

(exc. VAT)

Kr.24 390 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 6,504Kr. 19 512,00

*price indicative

RS Stock No.:
204-7263
Mfr. Part No.:
SIZ270DT-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19.1A

Maximum Drain Source Voltage Vds

100V

Series

SiZ270DT

Package Type

PowerPAIR 3 x 3S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0377Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

33W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13.3nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

3.3mm

Standards/Approvals

No

Height

0.75mm

Width

3.3 mm

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 100 V (D-S) MOSFETs is an integrated MOSFET half bridge power stage and has a optimized Qgs/Qgs ratio improves switching characteristics.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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