MPN

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8

RS Stock No.:: 200-6840
Mfr. Part No.:: SIDR638DP-T1-RE3
Brand:: Vishay

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8

Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.957 40

(exc. VAT)

Kr.1 196 75

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

Shipping from 04. september 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 25	Kr. 38,296	Kr. 957,40
50 - 100	Kr. 31,021	Kr. 775,53
125 - 225	Kr. 28,719	Kr. 717,98
250 +	Kr. 26,815	Kr. 670,38

*price indicative

RS Stock No.:: 200-6840
Mfr. Part No.:: SIDR638DP-T1-RE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SO-8
	Series	TrenchFET Gen IV
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.16mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	204nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Width	5.15 mm
	Length	6.15mm
	Height	0.61mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Package Type SO-8
	Series TrenchFET Gen IV
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.16mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 204nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Width 5.15 mm
	Length 6.15mm
	Height 0.61mm
	Standards/Approvals No
	Automotive Standard No

Document- SIDR638DP-T1-RE3

The Vishay SIDR638DP-T1-RE3 is a N-channel 40V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

Top side cooling feature provides additional venue for thermal transfer

100 % Rg and UIS tested

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8

FREE delivery for online orders over 500,00 kr

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