STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG

Subtotal (1 tube of 30 units)*

Kr. 4 182,72

(exc. VAT)

Kr. 5 228,40

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 139,424Kr. 4 182,72

*price indicative

RS Stock No.:
671-931
Mfr. Part No.:
SCT012W90G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

HIP-247-3

Series

STPOWER Gen3 SiC MOSFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

15.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

625W

Typical Gate Charge Qg @ Vgs

138nC

Maximum Gate Source Voltage Vgs

22V

Maximum Operating Temperature

200°C

Height

5.15mm

Standards/Approvals

No

Length

35.9mm

Width

15.75mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

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