STMicroelectronics SiC MOSFET N-Channel, 55 A, 650 V Enhancement, 3-Pin Hip-247 SCT018W65G3AG

Subtotal (1 tube of 30 units)*

Kr. 3 112,59

(exc. VAT)

Kr. 3 890,73

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 103,753Kr. 3 112,59

*price indicative

RS Stock No.:
671-935
Mfr. Part No.:
SCT018W65G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SiC MOSFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

398W

Typical Gate Charge Qg @ Vgs

76nC

Maximum Operating Temperature

200°C

Height

5.15mm

Length

35.9mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

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