ROHM RD3L08CBLHRB N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL)
- RS Stock No.:
- 687-440P
- Mfr. Part No.:
- RD3L08CBLHRBTL
- Brand:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (20 units, supplied on a continuous strip)*
Kr. 242,20
(exc. VAT)
Kr. 302,80
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 22 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | Kr. 12,11 |
| 50 - 198 | Kr. 10,84 |
| 200 - 998 | Kr. 8,765 |
| 1000 + | Kr. 8,565 |
*price indicative
- RS Stock No.:
- 687-440P
- Mfr. Part No.:
- RD3L08CBLHRBTL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | RD3L08CBLHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.5mm | |
| Height | 2.3mm | |
| Width | 6.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series RD3L08CBLHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.5mm | ||
Height 2.3mm | ||
Width 6.8mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for demanding applications, offering excellent efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current of 80A, this device is ideal for switching and amplification tasks in automotive and consumer electronics. Its low on-resistance of just 5.3mΩ maximises power efficiency, while its robust construction ensures it withstands harsh operational environments, meeting AEC-Q101 qualifications and providing 100% avalanche testing for enhanced safety. This MOSFET represents a powerful solution for advanced circuitry, blending performance with stringent compliance standards.
Low on resistance of 5.3mΩ significantly improves energy efficiency
Supports up to 80A continuous drain current for robust performance in demanding applications
100% avalanche tested to ensure stability and reliability during operation
AEC Q101 qualified, making it suitable for automotive applications
Wide operating junction temperature range from -55°C to +175°C ensures reliable performance in various conditions
Integrated thermal resistance of junction-case optimises power handling capabilities
Pb free and RoHS compliant, aligning with modern environmental standards.
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