DiodesZetex DMG3406L N channel-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 DMG3406L-13
- RS Stock No.:
- 719-488
- Mfr. Part No.:
- DMG3406L-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 6,42
(exc. VAT)
Kr. 8,025
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 18 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 120 | Kr. 1,284 | Kr. 6,42 |
| 125 - 495 | Kr. 1,15 | Kr. 5,75 |
| 500 - 2495 | Kr. 1,016 | Kr. 5,08 |
| 2500 - 4995 | Kr. 0,884 | Kr. 4,42 |
| 5000 + | Kr. 0,802 | Kr. 4,01 |
*price indicative
- RS Stock No.:
- 719-488
- Mfr. Part No.:
- DMG3406L-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMG3406L | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 11.2nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.1mm | |
| Width | 2.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMG3406L | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 11.2nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.1mm | ||
Width 2.5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for high efficiency power management applications. Engineered to minimise on-state resistance while delivering superior switching performance, this component is Ideal for battery charging, DC-DC converters, and portable power adaptors. Its robust mechanical design, combined with a lead-free and RoHS-compliant construction, underscores its commitment to environmental sustainability and reliability across a wide range of applications. Capable of handling substantial current loads, this MOSFET serves as an essential component for modern electronic systems requiring reliable power management.
Low on resistance for improved efficiency in power management
Fast switching speed enhances performance in dynamic applications
Low input capacitance reduces system power requirements
Designed for a maximum drain-source voltage of 30V, ensuring versatility
RoHS compliant, supporting eco-friendly device production
Total lead-free construction, aligning with environmental standards
High continuous drain current capability of 3.6A at 25°C maximizes application performance
Moisture sensitivity level 1 ensures robust reliability in various environments
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