Vishay Si2304DDS Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3
- RS Stock No.:
- 812-3117
- Mfr. Part No.:
- SI2304DDS-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.115 95
(exc. VAT)
Kr.144 95
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 200 unit(s) ready to ship
- Plus 2 800 unit(s) shipping from 25. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | Kr. 2,319 | Kr. 115,95 |
| 500 - 1200 | Kr. 1,626 | Kr. 81,30 |
| 1250 - 2450 | Kr. 1,275 | Kr. 63,75 |
| 2500 - 4950 | Kr. 1,16 | Kr. 58,00 |
| 5000 + | Kr. 1,044 | Kr. 52,20 |
*price indicative
- RS Stock No.:
- 812-3117
- Mfr. Part No.:
- SI2304DDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | Si2304DDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series Si2304DDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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