Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3

RS Stock No.:: 178-3853
Mfr. Part No.:: Si2319DDS-T1-GE3
Brand:: Vishay Siliconix

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3

Bulk discount available

Subtotal (1 pack of 50 units)*

Kr.215 55

(exc. VAT)

Kr.269 45

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Last RS stock

Final 4 900 unit(s), ready to ship

Units	Per unit	Per Pack*
50 - 50	Kr. 4,311	Kr. 215,55
100 - 450	Kr. 3,661	Kr. 183,05
500 - 950	Kr. 3,235	Kr. 161,75
1000 +	Kr. 2,798	Kr. 139,90

*price indicative

RS Stock No.:: 178-3853
Mfr. Part No.:: Si2319DDS-T1-GE3
Brand:: Vishay Siliconix

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.7W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Width	1.4 mm
	Automotive Standard	No

	Select all
	Brand Vishay Siliconix
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.7W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Width 1.4 mm
	Automotive Standard No

Datasheet

RoHS Status: Exempted

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 75mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery switch

• Load switch

• Motor drive control

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested