Vishay TrenchFET Type P-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3

Subtotal (1 pack of 20 units)*

Kr. 96,44

(exc. VAT)

Kr. 120,56

(inc. VAT)

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  • Final 11 140 unit(s) shipping from 02. mars 2026
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Per Pack*
20 +Kr. 4,822Kr. 96,44

*price indicative

Packaging Options:
RS Stock No.:
710-3241
Mfr. Part No.:
SI2303CDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2.7A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.33Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.3W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Height

1.02mm

Width

1.4 mm

Standards/Approvals

IEC 61249-2-21

Length

3.04mm

Automotive Standard

No

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


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