Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3

Subtotal (1 pack of 20 units)*

Kr.206 72 

(exc. VAT)

Kr.258 40 

(inc. VAT)

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Being discontinued
  • 40 left, ready to ship
  • Plus 60 left, ready to ship from another location
  • Final 15 600 unit(s) shipping from 09. januar 2026
Units
Per unit
Per Pack*
20 +Kr. 10,336Kr. 206,72

*price indicative

Packaging Options:
RS Stock No.:
812-3123
Mfr. Part No.:
SI2337DS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

80V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.303Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Minimum Operating Temperature

-50°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21

Length

3.04mm

Width

1.4 mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


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