Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3

Subtotal (1 pack of 20 units)*

Kr. 274,68

(exc. VAT)

Kr. 343,36

(inc. VAT)

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Being discontinued
  • Plus 40 unit(s) shipping from 22 June 2026
  • Final 400 unit(s) shipping from 29 June 2026
Units
Per unit
Per Pack*
20 +Kr. 13,734Kr. 274,68

*price indicative

Packaging Options:
RS Stock No.:
812-3123
Mfr. Part No.:
SI2337DS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.303Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-50°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

IEC 61249-2-21

Length

3.04mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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