Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3

RS Stock No.:: 180-7944
Mfr. Part No.:: SI2300DS-T1-GE3
Brand:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3

Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.62 925

(exc. VAT)

Kr.78 65

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Last RS stock

Final 4 675 unit(s), ready to ship

Units	Per unit	Per Pack*
25 - 225	Kr. 2,517	Kr. 62,93
250 - 600	Kr. 2,466	Kr. 61,65
625 - 1225	Kr. 1,89	Kr. 47,25
1250 - 2475	Kr. 1,51	Kr. 37,75
2500 +	Kr. 1,336	Kr. 33,40

*price indicative

RS Stock No.:: 180-7944
Mfr. Part No.:: SI2300DS-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	68mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.1W
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.12mm
	Width	2.64 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 68mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.1W
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.12mm
	Width 2.64 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 12V. It has drain-source resistance of 68mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter for portable devices

• Load switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested