Vishay TrenchFET N-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318HDS-T1-GE3

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Subtotal (1 unit)*

Kr. 2,29

(exc. VAT)

Kr. 2,86

(inc. VAT)

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Units
Per unit
1 - 24Kr. 2,29
25 - 99Kr. 1,49
100 +Kr. 0,92

*price indicative

RS Stock No.:
735-214
Mfr. Part No.:
SI2318HDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.6A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.051Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.8nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.1W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
US

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