Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3

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Subtotal (1 pack of 25 units)*

Kr. 190,825

(exc. VAT)

Kr. 238,525

(inc. VAT)

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Temporarily out of stock
  • 5 925 unit(s) shipping from 26 March 2027
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Units
Per unit
Per Pack*
25 - 225Kr. 7,633Kr. 190,83
250 - 600Kr. 7,244Kr. 181,10
625 - 1225Kr. 5,349Kr. 133,73
1250 - 2475Kr. 4,947Kr. 123,68
2500 +Kr. 4,585Kr. 114,63

*price indicative

Packaging Options:
RS Stock No.:
228-2814
Mfr. Part No.:
Si2387DS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

80V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

100 % Rg and UIS tested

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