Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23 SI2392ADS-T1-GE3

RS Stock No.:: 180-7811
Mfr. Part No.:: SI2392ADS-T1-GE3
Brand:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23 SI2392ADS-T1-GE3

Bulk discount available

Subtotal (1 pack of 20 units)*

Kr.93 58

(exc. VAT)

Kr.116 98

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Last RS stock

Final 1 380 unit(s), ready to ship

Units	Per unit	Per Pack*
20 - 180	Kr. 4,679	Kr. 93,58
200 - 480	Kr. 3,512	Kr. 70,24
500 - 980	Kr. 3,043	Kr. 60,86
1000 - 1980	Kr. 2,814	Kr. 56,28
2000 +	Kr. 2,197	Kr. 43,94

*price indicative

RS Stock No.:: 180-7811
Mfr. Part No.:: SI2392ADS-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	100V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	189mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.6W
	Typical Gate Charge Qg @ Vgs	2.9nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Width	2.64 mm
	Height	1.12mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 100V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 189mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.6W
	Typical Gate Charge Qg @ Vgs 2.9nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Width 2.64 mm
	Height 1.12mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 126mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 2.5W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Boost converters

• DC/DC converters

• LED backlighting in LCD TVs

• Load switch

• Power management for mobile computing

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested