Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3

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Subtotal (1 pack of 25 units)*

Kr.90 825 

(exc. VAT)

Kr.113 525 

(inc. VAT)

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Last RS stock
  • Plus 100 unit(s) shipping from 05. januar 2026
  • Final 75 unit(s) shipping from 12. januar 2026
Units
Per unit
Per Pack*
25 - 225Kr. 3,633Kr. 90,83
250 - 600Kr. 3,414Kr. 85,35
625 - 1225Kr. 3,084Kr. 77,10
1250 - 2475Kr. 2,91Kr. 72,75
2500 +Kr. 2,723Kr. 68,08

*price indicative

Packaging Options:
RS Stock No.:
152-6358
Mfr. Part No.:
SI2302DDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±8 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

3.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.86W

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS

Length

3.04mm

Width

1.4 mm

Height

1.02mm

Automotive Standard

No

Halogen-free

TrenchFET® Power MOSFET

100 % Rg Tested

APPLICATIONS

Load Switching for Portable Devices

DC/DC Converter

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