Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23

View all MOSFETs
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
180-7275
Mfr. Part No.:
SI2392ADS-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

189mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2.9nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.6W

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Length

3.04mm

Width

2.64 mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 126mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 2.5W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• Boost converters

• DC/DC converters

• LED backlighting in LCD TVs

• Load switch

• Power management for mobile computing

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

Related links