Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3

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Subtotal (1 tape of 20 units)*

Kr.70 48 

(exc. VAT)

Kr.88 10 

(inc. VAT)

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Being discontinued
  • Final 28 600 unit(s), ready to ship
Units
Per unit
Per Tape*
20 - 180Kr. 3,524Kr. 70,48
200 - 480Kr. 2,637Kr. 52,74
500 - 980Kr. 2,288Kr. 45,76
1000 - 1980Kr. 1,934Kr. 38,68
2000 +Kr. 1,756Kr. 35,12

*price indicative

Packaging Options:
RS Stock No.:
787-9024
Mfr. Part No.:
SI1032R-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

210mA

Maximum Drain Source Voltage Vds

20V

Package Type

SC-75

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

340mW

Maximum Gate Source Voltage Vgs

±6 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.8mm

Length

1.68mm

Width

0.86 mm

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor


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