Vishay Si1012CR Type N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-75 SI1012CR-T1-GE3
- RS Stock No.:
- 787-9005
- Mfr. Part No.:
- SI1012CR-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 20 units)*
Kr.34 56
(exc. VAT)
Kr.43 20
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 27. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | Kr. 1,728 | Kr. 34,56 |
| 200 - 480 | Kr. 1,201 | Kr. 24,02 |
| 500 - 980 | Kr. 1,07 | Kr. 21,40 |
| 1000 - 1980 | Kr. 0,933 | Kr. 18,66 |
| 2000 + | Kr. 0,915 | Kr. 18,30 |
*price indicative
- RS Stock No.:
- 787-9005
- Mfr. Part No.:
- SI1012CR-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-75 | |
| Series | Si1012CR | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 240mW | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.68mm | |
| Height | 0.8mm | |
| Width | 0.86 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-75 | ||
Series Si1012CR | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 240mW | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.68mm | ||
Height 0.8mm | ||
Width 0.86 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
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