Vishay SiR N channel-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5800DP

Image representative of range

Bulk discount available

Subtotal (1 unit)*

Kr. 38,90

(exc. VAT)

Kr. 48,62

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 25 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9Kr. 38,90
10 - 49Kr. 24,02
50 - 99Kr. 18,65
100 +Kr. 13,73

*price indicative

RS Stock No.:
735-133
Mfr. Part No.:
SiRS5800DP
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

265A

Maximum Drain Source Voltage Vds

80V

Series

SiR

Package Type

PowerPAK SO-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0018Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

240W

Forward Voltage Vf

80V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

81nC

Maximum Operating Temperature

150°C

Width

5mm

Standards/Approvals

RoHS

Length

6mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 80V drain-source voltage, optimized for low-loss synchronous rectification in AI power server buck converters. It achieves industry-leading on-resistance of 1.8mΩ maximum at 10V gate drive for superior efficiency under high load conditions.

265A pulsed drain current rating

81nC typical total gate charge

52°C/W thermal resistance junction-to-case

Related links