Vishay SiK N channel-Channel MOSFET, 795 A, 40 V Enhancement, 8-Pin PowerPAK 10 x 12 SiJK140E

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Subtotal (1 unit)*

Kr. 98,27

(exc. VAT)

Kr. 122,84

(inc. VAT)

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1 - 9Kr. 98,27
10 - 49Kr. 60,98
50 - 99Kr. 47,13
100 +Kr. 34,78

*price indicative

RS Stock No.:
735-142
Mfr. Part No.:
SiJK140E
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

795A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK 10 x 12

Series

SiK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00047Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

536W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

40V

Typical Gate Charge Qg @ Vgs

312nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

10mm

Height

4mm

Length

12mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

0.21°C/W low RthJC for optimal thermal performance

312nC typical total gate charge

Standard level FET with 2.4V minimum VGS

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