Vishay E Type N-Channel Power MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3
- RS Stock No.:
- 239-5381
- Mfr. Part No.:
- SIHK075N60E-T1-GE3
- Brand:
- Vishay
Subtotal (1 unit)*
Kr. 65,80
(exc. VAT)
Kr. 82,25
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 + | Kr. 65,80 |
*price indicative
- RS Stock No.:
- 239-5381
- Mfr. Part No.:
- SIHK075N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.08Ω | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.08Ω | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 29A Maximum Continuous Drain Current - SIHK075N60E-T1-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding electronic and electrical systems. It operates as an N-channel device suitable for surface-mount implementations, offering high-temperature endurance and substantial continuous current capability for power conversion and switching tasks in industrial environments.
Features and Benefits:
• 600V rating enables high-voltage switching applications • 29A continuous current supports heavy-load operation • 0.08Ω low Rds(on) reduces conduction losses • 167W power dissipation allows sustained thermal load handling • 41nC typical gate charge facilitates Faster switching transitions • 150°C maximum operating temperature permits elevated-temperature use
Applications
• Suitable for inverter stages in industrial drives • Ideal for switch-mode power supplies in automation systems • Used for high-voltage motor control circuits • Can be used for power conversion in renewable-energy inverters • Suitable for solid-state switching in electrical distribution equipment
What gate-drive considerations should I account for in designs?
Drive circuitry must handle a maximum gate-to-source voltage of 30V and be able to source/sink current to charge the typical 41nC gate quickly for efficient switching.
How should thermal management be approached for prolonged operation?
Ensure adequate PCB thermal layout and heat-sinking to dissipate up to 167W, and consider the devices 150°C maximum junction rating when specifying cooling.
What are the electrical limits for safe operation at low temperatures?
The device is specified for use down to -55°C, so components and soldering processes must accommodate this minimum ambient without exceeding electrical stress limits.
Which package characteristics affect PCB assembly and layout?
The component uses an 8-pin PowerPAK 10x12 surface-mount package, requiring appropriate land pattern and solder paste deposition for reliable mounting and thermal transfer.
Is this suitable for automotive-grade replacements?
It is not specified to meet automotive standardisation, so suitability should be verified against vehicle-specific qualification requirements.
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