Vishay SIR626LDP N channel-Channel MOSFET, 186 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR626LDP-T1-BE3
- RS Stock No.:
- 736-347
- Mfr. Part No.:
- SIR626LDP-T1-BE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
Kr. 25,28
(exc. VAT)
Kr. 31,60
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 28 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | Kr. 25,28 |
| 10 - 24 | Kr. 16,36 |
| 25 - 99 | Kr. 9,04 |
| 100 - 499 | Kr. 8,92 |
| 500 + | Kr. 8,81 |
*price indicative
- RS Stock No.:
- 736-347
- Mfr. Part No.:
- SIR626LDP-T1-BE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 186A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIR626LDP | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0015Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 186A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIR626LDP | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0015Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Width 5.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET delivers exceptional performance for various applications, including synchronous rectification and motor driving, ensuring efficiency in power management solutions.
N-Channel configuration enables high-efficiency switching
Robust ratings support high-temperature environments up to 150 °C
Related links
- Vishay SISS52DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3
- Vishay SISS64DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-BE3
- Vishay SISS30DN N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS30DN-T1-BE3
- Vishay SISS26DN N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-BE3
- Vishay SIR680LDP N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK SO-8 SIR680LDP-T1-BE3
- Vishay SISS32LDN Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3
- Vishay SISS32LDN Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK
- Infineon BSZ Type N-Channel MOSFET 25 V N, 8-Pin TSDSON