Vishay SIZF5302DT Dual N-Channel MOSFET, 100 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-UE3
- RS Stock No.:
- 736-358
- Mfr. Part No.:
- SIZF5302DT-T1-UE3
- Brand:
- Vishay
Subtotal (1 tape of 1 unit)*
Kr. 13,61
(exc. VAT)
Kr. 17,01
(inc. VAT)
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- Shipping from 29 June 2027
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Tape(s) | Per Tape |
|---|---|
| 1 + | Kr. 13,61 |
*price indicative
- RS Stock No.:
- 736-358
- Mfr. Part No.:
- SIZF5302DT-T1-UE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N-Channel | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIZF5302DT | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48.1W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N-Channel | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIZF5302DT | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48.1W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Dual N-channel MOSFET, efficiently managing power in various applications such as synchronous buck and computer peripherals.
Utilises TrenchFET Gen V technology for enhanced efficiency
Features dual N-channel architecture that optimises heat dissipation
Capable of handling a maximum continuous drain current of 28.1A at 25°C
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