Infineon OptiMOS N-Channel Power MOSFET, 127 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE031N08LM6CGSCATMA1

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Subtotal (1 unit)*

Kr. 35,58

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Kr. 44,48

(inc. VAT)

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Per unit
1 - 9Kr. 35,58
10 - 99Kr. 24,48
100 - 499Kr. 20,82
500 - 999Kr. 20,13
1000 +Kr. 19,45

*price indicative

RS Stock No.:
762-895
Mfr. Part No.:
IQE031N08LM6CGSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

127A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

PG-WHTFN-9

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

3.15mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

33nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

175°C

Length

3.4mm

Height

750μm

Standards/Approvals

RoHS Compliant

Width

3.4mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor is optimized for high performance SMPS featuring rated voltage of 80 V. It is halogen‑free according to IEC61249‑2‑21 and is RoHS compliant.

N‑channel

100% avalanche tested

75°C operating temperature

Pb‑free lead plating

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