Infineon CoolSiC N channel-Channel Power MOSFET, 74 A, 1400 V Enhancement, 4-Pin TO-247-4 IMZC140R024M2HXKSA1
- RS Stock No.:
- 762-925
- Mfr. Part No.:
- IMZC140R024M2HXKSA1
- Brand:
- Infineon
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Subtotal (1 unit)*
Kr. 156,41
(exc. VAT)
Kr. 195,51
(inc. VAT)
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- Shipping from 16 November 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 156,41 |
| 10 - 24 | Kr. 140,76 |
| 25 + | Kr. 115,74 |
*price indicative
- RS Stock No.:
- 762-925
- Mfr. Part No.:
- IMZC140R024M2HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 1400V | |
| Series | CoolSiC | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 330W | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 23.5mm | |
| Standards/Approvals | RoHS | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 1400V | ||
Series CoolSiC | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 330W | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Maximum Operating Temperature 175°C | ||
Length 23.5mm | ||
Standards/Approvals RoHS | ||
Height 5.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC 1400 V SiC MOSFET G2 is a Silicon Carbide MOSFET with .XT interconnection technology. It uses .XT interconnection technology for best-in-class thermal performance and robust body diode for hard commutation.
High-temperature operation
Suitable for hard commutation
Reliable thermal management
Enhanced performance
Increased efficiency
Optimized gate drive
Suitable for power electronics
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